发明名称 |
Method of making a trench capacitor |
摘要 |
A method of making a trench capacitor including the following steps: forming a first trench of predetermined depth into a semiconductor substrate; forming an electrode plate on the side-wall of a bottom of the first trench; forming a dielectric layer on the electrode plate; forming a first conductive portion on the dielectric layer, wherein the first conductive portion fills the bottom of the first trench to form a second trench; forming an insulation layer to fill the bottom portion of the second trench to make a third trench in the second trench; forming a conductive spacer along the side-wall of the third trench; etching the insulation layer using the conductive spacer as a mask to form a forth trench; and then filling the forth trench with a conductive material.
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申请公布号 |
US6117726(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19990326668 |
申请日期 |
1999.06.07 |
申请人 |
NAN YA TECHNOLOGY CORPORATION |
发明人 |
TSAI, HSIN-CHUAN;LEE, PEI-ING PAUL |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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