| 摘要 |
PROBLEM TO BE SOLVED: To obtain a diamond film excellent in electron emission characteristics, exhibiting high luminance by generating plasma using pulse microwaves followed by reacting a mixed gas of a carbon source and hydrogen with a scratch-treated hot substrate to provide plasma chemical vapor deposition. SOLUTION: This diamond film is obtained by the following process: the surface of a substrate of silicon, platinum, iridium, or the like, is subjected to scratch treatment, in advance, with ultra-hard substance such as diamond powder and then heated to about 1,000-1,300 K; the resulting substrate is reacted with a mixed gas of hydrogen gas and a carbon source gas such as methane or ethane using plasma generated by pulse microwaves under such conditions as to be about 2-10 GHz in electric source frequency, about 50-300 W in microwave output, and about 1.1-2 kPa in treatment pressure to provide chemical vapor deposition, wherein the pulse microwaves are oscillated under such conditions as to be 1-10 s in pulse width and 0.1-1 Hz in repeating frequency, and the volume ratio of the carbon source gas to hydrogen gas is set at about (1:10) to (1:300).
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