| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which can be improved in luminous output and dielectric breakdown voltage for expanding the applicability of the element to various application products. SOLUTION: In a nitride semiconductor element having an n-side nitride semiconductor layer, an active layer 7, and a p-side nitride semiconductor layer on a substrate 1, the active layer 7 has an InaGa1-aN (0<=a<=1) multiple quantum well structure and the n-type nitride semiconductor layer is constituted by laminating an n-type first multilayered film 5 composed of two kinds of nitride semiconductor layers having the same composition doped with an n-type impurity at different concentrations and having different band gap energy or doped with the n-type impurity at different concentrations, a first nitride semiconductor layer containing In, a second nitride semiconductor layer having a composition which is different from that of the first nitride semiconductor layer upon another. In addition, an n-type multilayered film 6 is formed between the n-type first multilayered film 5 and active layer 7. |
