发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To make it possible to reliably avoid the instability at each critical spot on conductor paths by a method wherein the conductor paths are supported by dummy contacts at the critical spots due to a layout. SOLUTION: The conductor paths 10 and 11 and 14 and 15 out of conductor paths 10 to 15 are respectively crossovered mutually at twisted regions. When the conductor paths 10 to 15 are metallized, critical spots are respectively generated at places, where a discontinuity is generated for a proximity effect in the proximity parts of the conductor paths, on the conductor paths. Such the discontinuity is generated in the case where one of the conductor paths adjacent to each other is blockaded. At this uncontinuous place, the conductor path has an instability and a breaking of the conductor path is caused. Dummy contacts 16 to 20 are respectively provided on these critical spots and these dummy contacts 16 to 20 lead to the plane positioned under the lower part of the plane of the conductor paths. Thereby, the instability of the conductor paths or the breaking of the conductor paths can be reliably avoided.
申请公布号 JP2000243837(A) 申请公布日期 2000.09.08
申请号 JP20000038349 申请日期 2000.02.16
申请人 INFINEON TECHNOLOGIES AG 发明人 FEURLE ROBERT;SCHNEIDER HELMUT
分类号 H01L21/302;H01L21/3065;H01L21/768;H01L23/528;(IPC1-7):H01L21/768;H01L21/306 主分类号 H01L21/302
代理机构 代理人
主权项
地址