| 摘要 |
PROBLEM TO BE SOLVED: To convert electricity into light using the exciton light emission by ZnO by forming an epitaxial ZnO film of a low resistance on a sapphire substrate and then forming a ZnO exciton light emitting section on the epitaxial ZnO film. SOLUTION: An atomic arrangements in the [1-100] direction and a [11-20] direction of ZnO are aligned by 11:13 with those in the [11-20] direction and a [10-10] direction of the c-face sapphire substrate 2. Therefore, by forming a ZnO layer 3 on the sapphire substrate 2, a ZnO crystal oriented with respect to C axis having a good crystallinity can be grown. Moreover, a ZnO light emitting section 4 having a good crystallinity can be epitaxially grown on the ZnO layer 3, with the ZnO layer 3 of a low resistance which will become an electrode being formed under the ZnO light emitting section 4. By applying a voltage between an upper electrode 6 and lower electrode 5, the ZnO light emitting section 4 emits light by excitons, emitting light having a wavelength between blue and ultraviolet. By supplying electric energy from these electrodes, this light emitting element can be allowed to emit light. |
