| 摘要 |
PROBLEM TO BE SOLVED: To improve remarkably efficiency of burn-in and to apply stably DC voltage stress to a word line part by applying simultaneously voltage stress to all word lines through a word line driving circuit at the time of test of voltage stress or to word lines of numbers selected at the time of normal operation or more. SOLUTION: This semiconductor memory has a transistor 71 connected between an output side of a word line selecting circuit 50 and the prescribed potential, at the time of normal operation, a word line selecting signal outputted from the word line selecting circuit 50 is outputted, at the time of testing voltage stress, a word line driving circuit is controlled so that it selects more rows than those selected in accordance with an external address signal input at the time of normal operation by turning on the transistor 71 based on a stress test control signal. |
