| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor wafer, which lessens sagging of the outer peripheral part of the wafer for increasing the flatness of the surface of the wafer and also can shorten the polishing time for the surface of the wafer. SOLUTION: This manufacturing method is for manufacturing a semiconductor wafer, wherein both surfaces of the surface and rear of a chamfered semiconductor wafer are lapped over, and then when the wafer is subjected to alkali etching with an alkaline solution, a defect which is generated in the surface of this wafer is removed. The etching rate of alkali etching is slower than that of acid etching, the reaction of the wafer to an elution is comparatively gentle and the quantity of bubbles which are generated in the solution is inhibited. The surface of the wafer is hard to be roughened. Then the surface of this wafer subjected to alkali etching is ground. Moreover, the surface of the wafer is polished to manufacture a semiconductor wafer of a structure of high quality, wherein sagging of the outer peripheral part of the wafer is small. Moreover, since the surface of the wafer is ground before the polishing of the surface of the wafer, polishing time for the surface of the wafer is shortened.
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