| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture of a semiconductor device which has superior dimensional controllability in a gate recess having a desirable structure, and can readily be processed, when a gate electrode of a two-step recess structure is formed. SOLUTION: In this manufacturing method, GaAs layers 25, 27 having a double layer are laminated. At this time, etching stopper layers 24, 26 are formed under the respective GaAs layers 25, 27. The respective GaAs layers 25, 27 are etched with a citric acid/hydrogen peroxide solution, respectively, whereby the gate recess of a two-stage structure is formed in these GaAs layers 25, 27.
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