| 摘要 |
PROBLEM TO BE SOLVED: To form a high-melting metal silicide film, which is independent of a base and low in resistance on the surface of a silicon substrate, by a method wherein a cobalt film is formed at a specified temperature through sputtering, and furthermore a cobalt film is formed by sputtering in a specified range of temperature. SOLUTION: A gate insulating film 104 and a polycrystalline silicon are grown on an active region surrounded with a field oxide film 103 on a silicon substrate 101. Then, the polycrystalline silicon is patterned into a gate electrode 105, and a sidewall spacer 108 is formed on the side of the gate electrode 105. A natural oxide film is removed from the surfaces of the gate electrode 105 of polycrystalline silicon and the silicon substrate 101, and cobalt which is a high-melting metal is heated at a temperature of 200 deg.C or so and sputtered for the formation of a cobalt film 111. Furthermore, cobalt is heated at temperatures of 300 to 400 deg.C for the formation of a dicobalt monosilicide film 112.
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