| 摘要 |
<p>A method of conditioning pads (2) used in the polishing of semiconductor wafers containing copper circuitry. The method includes applying a treatment solution that contains a reactant for particulate copper-containing debris on the pad (2) resulting from the copper circuitry. Preferably, the reactant is a carboxylic acid present in a concentration of from about 0.1 to about 10 weight percent in a solution. The pH of the solution may be adjusted to the range from about 1 to about 6 with a compatible base.</p> |
