发明名称 REFERENCE VOLTAGE GENERATOR FOR INTEGRATED CIRCUIT SUCH AS DYNAMIC RANDOM ACCESS MEMORY (DRAM)
摘要 PROBLEM TO BE SOLVED: To provide reference voltage having high immunity for a noise by providing a voltage divider which is connected to a voltage supply source, decides reference voltage, and supplies a voltage output signal under control of a feedback control signal, and a feedback buffer amplifier for supplying a feedback control signal to a voltage divider. SOLUTION: A feedback buffer amplifier is provided in a reference voltage generator, and a N-type transistor M0 and a P-type transistor M1 which are connected in series between VDD and ground are provided. Gates of the transistors M0. M1 are connected respectively to a N-drive output signal 36 and a P-drive output signal 38, also, the transistors M0 and M1 are connected by a node D, the node D is connected to a substrate of the transistor M1, and supplies a feedback control signal 34 to a delay element. In order to secure quick response, the transistors M0, M1 has small size, and the node D is subjected to light load.
申请公布号 JP2000243081(A) 申请公布日期 2000.09.08
申请号 JP20000043897 申请日期 2000.02.22
申请人 STMICROELECTRONICS INC 发明人 GURITZ ELMER HENRY
分类号 G11C11/407;G05F1/46;G05F3/24;G11C7/14;G11C11/404;G11C11/4074;G11C11/4099;H01L21/822;H01L27/04;(IPC1-7):G11C11/407 主分类号 G11C11/407
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