| 摘要 |
PROBLEM TO BE SOLVED: To contrive the enhancement of the thermal conductivity of an aluminum nitride(AlN) layer and the modification of a matching of the thermal expansion of the aluminum nitride layer, by a method wherein the aluminum nitride layer having electrical insulation properties and a heat conductivity is arranged on an aluminum silicon carbide(AlSiC) base layer. SOLUTION: A substrate 110 is manufactured by obtaining a porous silicon carbide(SiC) preform having the roughly same size as that of a base layer 116, then an AlN insulating layer 114 is deposited on the SiC preform. Lastly, the preform and the layer 114 are encapsulated using a roughly pure aluminum layer and a sheath is formed on the encapsulated preform by a pressure casting process. The aluminum layer from the sheath is made to sock in the SiC preform during the pressure casting process to diffuse the aluminum layer in the preform to form the aluminum silicon carbide(AlSiC) base layer 116. Then, the aluminum layer is plated with a proper material which can be soldered. |
