| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser and its manufacturing method by which the resistivity to the noise of a return light, an excellent noise characteristic and a low operational current can be realized. SOLUTION: A semiconductor laser has a gain guide structure, grooves 111 and 112 are formed on both sides of a stripe part 107 adjacent to a light emitting front end face emitting a laser light in a way that a distance D between the bottom face and an active layer is set to within 800 nm, and a length Lf in the direction of an optical resonator is set to 60μm or less. An index guide area IDA having a difference of built-in refractive index are provided in terms of horizontal wave guide vertical to the lengthwise direction of the resonator, and a gain guide area GNA having no difference of built-in refractive index is provided in areas excluding the index guide area. Thus, a saturable absorption layer can be securely formed in the active layer to generate self-pulsation.
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