SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF AND METHOD OF DESIGNING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an SOI-structure semiconductor device in which a substrate floating effect is reduced. SOLUTION: Each transistor forming region in an SOI layer 3 is isolated by a partial oxide film 31 having a lower layer part where a well region is formed. A p-type well region 11 is formed in the lower layer of the partial oxide film 31 for separating NMOS transistors. An n-type well region 12 is formed in the lower layer of the partial oxide film 31 for separating PMOS transistors. A p-type well region 11 and an n-type well region 12 are formed adjacent to each other in the lower layer of the partial oxide film 31 separating an NMOS transistor and a PMOS transistor. A body region is in contact with an adjacent well region 11. A wiring layer formed on an interlayer insulating film 4 is electrically connected to the body region via a body contact provided in the interlayer insulating film 4.