| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the corrosion of an Al material in an etching process when source electrodes or gate electrodes are formed from an Al material. SOLUTION: This device is equipped with a source electrode 19 (gate electrode 12) having an Al or Al alloy layer, a pixel electrode 26 formed on the upper side of the source electrode 19 (gate electrode 12) and at least a TFT protective film 23 and an org. insulating film 24 to cover the source electrode 19 (gate electrode 12) between the source electrode 19 (gate electrode 12) and the pixel electrode 26. Thus, the pixel electrode 26 can be sufficiently separated from the first electrode such as the source electrode or gate electrode by the interlayer insulating layer. Therefore, even when film defects are present in one of plural interlayer insulating layers, the corrosion of the Al or Al alloy layer of the first electrode due to the film defects while etching the pixel electrode 26 can be prevented.</p> |
