NITRIDE SEMICONDUCTOR LASER AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a high quality reflection mirror surface with high reproducibility in laser structure by forming a decomposition region of nitride semiconductor on the interface of a substrate and a crystal layer at a part intersecting the cleavage surface for resonance of a laminated crystal layer. SOLUTION: This nitride semiconductor laser comprises a plurality of crystal layers 102 to 110 of group 3 nitride semiconductor (AlxGa1-x)1-yInyN (0<=x<=1, 0<=y<=1) laminated sequentially on a cleavage or breakage substrate 101. A decomposed product region 150 of nitride semiconductor is provided on the interface of the sapphire substrate 101 and the crystal layer at a part intersecting the cleavage surface for resonance of the laminated crystal layers 102 to 110. Since the crystal bond between the sapphire substrate and GaN crystal is broken locally in the decomposed product region 150 of nitride semiconductor formed by laser radiation, the GaN is cut along the cleavage surface of the GaN crystal itself in the vicinity of a reflector in the process for forming the resonance surface of element resulting in a high quality reflection mirror surface with high reproducibility.