发明名称 SEMICONDUCTOR RADIATION DETECTING ELEMENT AND RADIATION DETECTOR USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor radiation detecting element which is less in leakage current, can highly efficiently detect radiation, and can be manufactured inexpensively, a method for manufacturing the element, and a radiation detector using the element. SOLUTION: At the time of forming an insulating protective film 7 on the side face of a specular finished prismatic semiconductor crystal, the film 7 is formed immediately after specular finishing the crystal so that the specular finished surface may not be touched directly in the succeeding treatment processes and at the time of mounting a detecting element. The protective film 7 is formed closely to the main part of an electrode forming area formed on both front and rear surfaces of the semiconductor crystal in such a way that the film 7 covers the side face of the crystal and, at the same time, surrounds the periphery of the electrode forming area except the main part. A light receiving-side electrode 4 is formed in such a way that the electrode 4 is expanded from the main part of the electrode forming area of the semiconductor crystal to cover the peripheral edge section 7a of the protective film 7 so that the peripheral edge section 4a of the electrode 4 may overlap the peripheral edge section 7a of the protective film 7.
申请公布号 JP2000244003(A) 申请公布日期 2000.09.08
申请号 JP19990356787 申请日期 1999.12.16
申请人 HITACHI LTD 发明人 OCHIAI ISAO;KANDA KIMIO
分类号 H01L31/09;G01T1/24;(IPC1-7):H01L31/09 主分类号 H01L31/09
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