| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrain an etching rate and to enhance a polishing rate by a method, wherein a chemical mechanical polishing composition composed of polishing abrasive grains, an oxidizing agent, an oxidation inhibitor, amino acid, and water is made to contain a surface-active agent and a specific wt.% of an element selected from among a water-soluble high molecule group. SOLUTION: A chemical-mechanical polishing composition composed of polishing abrasive grains, an oxidizing agent, an oxidation inhibitor, amino acid, and water is made to contain an anion surface-active agent, where soluble salt of alkaline metal such as sulfonic acid and carboxylic acid is used, a cation surface-active agent where a cyclic nitrogen compound of simple amine salt that contains a primary or secondary amine which is capable of forming salt is used, and 0.00001 to 10 wt.% of an element selected from among a group composed of nonionic surface-active agents which are obtained by addition- polymerizing aliphatic acid, such as polyethylene glycol fatty ester or polyexiethylene alkylether adding ethylene oxide and water-soluble high molecules is made to be contained.</p> |
