SEMICONDUCTOR DEVICE, ITS MANUFACTURE AND ELECTROOPTIC DEVICE

摘要

PROBLEM TO BE SOLVED: To facilitate the increase in the film thickness of an insulating film, to lessen the discharge of an injurious material at the time of the manufacture of a semiconductor device and to make it possible to reduce a power consumption by a method wherein after an aperture is formed in a polysilazane film formed on a wiring layer, this polysilazane film is formed into the insulating film containing a silicon oxide film as its main component. SOLUTION: The formation of an insulating film using a polysilazane film and an aperture formed in the insulating film is applied to the formation of a first interlayer film 22, a drain electrode aperture 40 and a source electrode aperture 50 and is applied to the formation of a second layer insulating film 33 and a pixel electrode aperture 30. In the forming process of the insulating film and the aperture, first, the photosensitive polysilazane film is applied on a wiring layer by a spin method and after the polysilazane film is prebaked, the aperture is exposed on the polysilazane film and thereafter, the polysilazane film is dipped into an alkaline solution to open the polysilazane film. Then, the polysilazane film is annealed for three minutes at 350 deg.C in a steam-containing atmosphere, whereby the polysilazane film is denatured to obtain the insulating film containing a silicon oxide film as its main component and the aperture. Thereby, the increase in the film thickness of the insulating film is easy, the insulating film is excellent in flatness, the discharge of an injurious material at the time of the manufacture of a semiconductor device is little, a power consumption is reduced and the effect to the environment is lessened.