发明名称 |
METHOD OF OXIDIZING A SUBSTRATE IN THE PRESENCE OF NITRIDE AND OXYNITRIDE FILMS |
摘要 |
A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An oxygen-containing gas, or an oxygen-containing gas and a hydrogen-containing gas are provided to the chamber and reacted in the chamber. The reactive gases are used to oxidize the surface of the substrate and displace the nitrogen-containing material from the interface.
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申请公布号 |
WO0024049(A9) |
申请公布日期 |
2000.09.08 |
申请号 |
WO1999US24496 |
申请日期 |
1999.10.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MINER, GARY, E.;XING, GUANGCAI;LOPES, DAVID, R.;KUPPURAO, SATHEES |
分类号 |
H01L21/31;H01L21/28;H01L21/314;H01L21/316;H01L29/51;(IPC1-7):H01L21/314 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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