| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture of an acceleration sensor for preventing decrease in the yield associated with dicing. SOLUTION: After a diffused resistance wiring 15 is formed on a main surface side of a single crystal silicon substrate 10 and a silicon nitride film 19a is formed, the main surface side of the single crystal silicon substrate 10 is planarized by coating an SOG film by rotating the substrate 10. Subsequently, a metal layer 17 for bonding is formed on the planarized surface as a metal layer. Since the surface of the metal layer 17 for bonding is also planarized and no gap is formed between the metal layer 17 for bonding and an upper part cap 30, water or sawdust is prevented from entering a sensor chip during dicing, thereby preventing decrease in the yield associated with dicing. |
