| 摘要 |
A ferroelectric cell (70), particularly on a silicon substrate (22) comprisi ng an amorphous barrier layer (72) interposed between the ferroelectric stack a nd the silicon. Preferably, the ferroelectric stack includes conductive metal oxide electrodes sandwiching the ferroelectric layer. The metal oxide may ac t as a templating layer to crystallographically orient the ferroelectric layer . Alternatively, the electrodes and ferroelectric layer may be polycrystalline . The amorphous barrier layer (72) may be composed of an intermetallic alloy, such as Ti3Al, a metal-metalloid, such as Pd-Si, a combination of early and later transition metals, such as Ti-Ni, and other related compound metal systems, such as (Ti, Zr)-Be, that form amorphous metals.
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