| 摘要 |
PROBLEM TO BE SOLVED: To realize a high switching speed by reducing a parasitic capacity of a transistor. SOLUTION: A gate electrode 105 in a groove 103 made in a field relaxing region 102 and a base region 106 on a semiconductor substrate 101 is made to have a three-layer structure, and a step difference between a surface of the gate electrode 105 and base region 106 in the groove 103 is set to be within 500A so that diffusion layers of the source and base regions 107 and 106 can be made shallow.
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