| 摘要 |
<p>A non-volatile RAM device is disclosed which utilizes a plurality of ferromagnetic bits (6) each surrounded by a coil of a write line (13) for directing the remnant polarity thereof is disclosed. The direction of magnetic remnance in each bit (6) is dictated by the direction of a current induced into write line (13). Further, a magneto sensor (7) comprising a magneto resistor (1) coupled to a collector (2) is placed approximate each bit (6). The magneto resistor (1) is coupled to a control circuit (30) for receiving current. The current passing across magneto resistor (1) is biased in a direction either right or left of the original current flow direction. The collector is coupled to a sense line (4), which in turn, is coupled to an amplifier (12). When current flow is biased in the direction of the collector, the serial resistance of the magneto resistor will be decreased, and the sense line (4) will receive a high amount of current. However, when current flow is biased in the direction away from the collector, then the serial resistance of the magneto resistor will be effectively increased, and the sense line (4) will receive a small amount of current. The presence and amount of current in the sense line (4) is amplified and detected by the amplifier (12).</p> |
