| 摘要 |
PROBLEM TO BE SOLVED: To prevent minute foreign substances such as dirts which come into an assembly process for a semiconductor module, etc., from sticking to the side of a withstand-voltage insulating layer of a power semiconductor chip, which lowers a dielectric strength. SOLUTION: A plurality of IGBT chips 1 (power semiconductor chips) are housed in a package. Here, a semiconductor chip 1 and emitter/collector terminal plates 2 and 3 are held with a chip fixing frame 7 of heat-resistant insulator for each chip pair, which is incorporated in a package, with the chip fixing frame 7 having a soft structure comprising an elastic or heat-shrinkage material. With the IGBT chip 1 held, the side of a withstand-voltage insulating layer 1b formed in the edge region of the chip is covered in tight-contact state with a part of the chip fixing frame 7, so that foreign substances such as dirts are prevented from sticking to the side of the insulating layer 1b in an assembly process, for improved insulation performance.
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