METHOD AND APPARATUS FOR PLASMA DOPING

摘要

PROBLEM TO BE SOLVED: To sharply reduce the storage of a charge in the surface of a sample. SOLUTION: A plasma doping device is provided into such a structure that a plasma generating chamber 1 for generating a plasma and a doping chamber 2 for introducing impurities in the surface of a sample to be processed communicate with each other. A gas for sputtering is introduced from a first gas introducing means 6 into the chamber 1 and at the same time, when high-frequency power is applied to spiral electrodes 3, the plasma is generated. Since a voltage variable DC power supply 8 for variably feeding a negative DC bias voltage is connected with an target 7 containing impurity element, ions in the plasma collide with the target 7, and negative ions in the impurities are discharged from the target 7. The negative ions in the impurities are introduced in the surface of the sample 9 which is held on a sample board 10 in the chamber 2.