| 摘要 |
PROBLEM TO BE SOLVED: To keep an electric charge holding characteristic in high grade without reducing sense speed while reducing operation lower limit voltage. SOLUTION: A DSG potential is made a ground potential by activating a second nMOS transistor 32 in a DSG(dynamic sense ground) driver circuit 3 only for pre-charge operation in a DRAM(dynamic random access memory) and a prescribed period from directly after a sense amplifier driving signal SE is activated, after that, the second nMOS transistor 32 is made a non- activation state, while a DSG potential in a sense amplifier activation period is clamped to near a threshold potential VTN of a first nMOS transistor 31 by raising a DSG potential by a current supplied from a DSG potential compensating circuit 5 and a current discharged from a sense amplifier.
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