| 摘要 |
PROBLEM TO BE SOLVED: To easily realize a change in the connection of wirings at the time of the manufacture of a semiconductor integrated circuit in the number of few processes by a method wherein the first wirings on contact holes for first connection are extendedly arranged in the direction of the flow of a current in a length of the same degree as that of the length of the arrangement of the contact holes for first connection. SOLUTION: A silicon oxide film is formed on a silicon substrate as an insulating film and thereafter, a polycrystalline silicon film is grown on the silicon oxide film to implant ions in the polycrystalline silicon film so that impurities, such as boron, generate a desired sheet resistance and thereafter, the polycrystalline silicon film is patterned, a polycrystalline silicon layer 3 is formed and contact holes 1 are formed so that the holes 1 are formed into a first resistor length L1. Moreover, aluminium patterns 2, which are used as first wirings, are respectively formed on the holes 1, the patterns 2 are extended in the direction of the flow of a current in a length of the same degree as that of the length of the arrangement of the holes 1 to connect with other element.
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