| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which is equipped with a MIS transistor that is small in power consumption in a standby mode and provided with an gate insulating film which is restrained from deteriorating. SOLUTION: A CMOS circuit is composed of a P-channel MIS transistor MP1 equipped with a thin gate insulating film tox1 and an N-channel MIS transistor MN1, a P-channel MIS transistor MP2 equipped with a thick gate insulating film tox2 is inserted between the CMOS circuit and a power supply potential Vcc, the source and well of the P-channel MIS transistor MP1 are connected to the drain of the P-channel MIS transistor MP2, an N-channel MIS transistor MN2 equipped with a thick gate insulating film tox2 is inserted between the above CMOS circuit and a ground potential GND, and the source and well of the N-channel MIS transistor MN1 are connected to the drain of the N- channel MIS transistor MN2.
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