发明名称 Vertikalresonator-Laserdiode mit einer lichtabsorbierenden Schicht
摘要 The invention relates to a vertical resonator laser diode (10, 20). An active series of layers (3) is arranged between a first Bragg reflector layer series (2) and a second Bragg reflector layer series (4) in order to produce laser irradiation. Each Bragg reflector layer series is provided with a plurality of mirror pairs (22, 44). The two Bragg reflector layer series (2, 4) form a laser resonator. The two Bragg reflector layer series (2, 4) and the active series of layers (3) are arranged between a first (7) and a second electrical contact layer (8). One (4) of the two Bragg reflector layer series (2, 4) is partially permeable for laser irradiation which is produced in the active series of layers (3). At least one light absorbing layer (9) with a defined light absorption is arranged between the partially permeable Bragg reflector layer series (4) and the first electrical contact layer (7) or on the light emitting side of the first electrical contact layer (7).
申请公布号 DE19908426(A1) 申请公布日期 2000.09.07
申请号 DE19991008426 申请日期 1999.02.26
申请人 SIEMENS AG 发明人 WIPIEJEWSKI, TORSTEN
分类号 H01S5/06;H01S5/183;(IPC1-7):H01S5/187;H01S3/098 主分类号 H01S5/06
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