| 摘要 |
A manufacturing method for an electronic integrated circuit, involves forming electrically active elements, such as MOS- transistors (20,20) in the region of one plane, and then applying at least one insulation layer (100) and at least one contact layer (110) on to the active elements, with at least one bonding wire (140) applied to the contact layer. The contact layer (110) is provided with a thickness of at least 10 per cent of the radius of the bonding wire (140), or more specifically at least 15 per cent. |
