Semiconductor memory, especially non-volatile memory with ferroelectric capacitors, has source-drain region formed before producing gate in trench self-aligned with the source-drain region

摘要

A semiconductor memory, comprising a source/drain region (5) formed before producing a gate (8a, 9a, 10a) in a trench (7) self-aligned with the source/drain region, is new. A semiconductor component comprises a source/drain region (5) formed in a semiconductor substrate (1) of opposite conductivity type, an interlayer insulation (6) formed on the substrate and including a trench (7) which is self-aligned with the source/drain region and which extends down to the substrate surface, and a gate (8a, 9a, 10a) formed on at least the inner wall of the trench. An Independent claim is also included for production of a semiconductor memory as described above. Preferred Features: The gate comprises a dielectric gate buffer film (8a), a ferroelectric gate film (9a) and a gate electrode (10a).