发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
In a manufacturing method of an active matrix type liquid crystal display device, a semiconductor device having good TFT characteristics is realized. LDD regions of a driver circuit NTFT and LDD regions of a pixel section NTFT are given different impurity concentration. An impurity is doped at differing concentrations using a mask. Thus a liquid crystal display device provided with a driver circuit having high speed operation and a pixel section with high reliability can be obtained. |
申请公布号 |
EP1033755(A2) |
申请公布日期 |
2000.09.06 |
申请号 |
EP20000104686 |
申请日期 |
2000.03.03 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI, HISASHI |
分类号 |
H01L27/12;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/32;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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