Semiconductor laser and a manufacturing method for the same

摘要

A semiconductor laser (LS1), including: an n-type cladding layer (3) that has n-type conductivity; an active layer (4) formed on top of the n-type cladding layer; a p-type cladding base layer (5) that is formed on top of the active layer (4) and has p-type conductivity; a current-blocking layer (13) that is formed on specified parts of an upper surface of the p-type cladding base layer (5) and substantially has n-type conductivity; and a p-type buried cladding layer (7) that has p-type conductivity and is formed so as to cover the current-blocking layer (13) and contact remaining parts of the upper surface of the p-type cladding base layer (5). The current-blocking layer (13) has at least two regions (13a,13b) having different concentrations (hereafter "N1" and "N2" where N1<N2) of n-type carriers, a region adjacent to an interface between the p-type cladding base layer (5) and the p-type buried cladding layer (7) having the N1 concentration of n-type carriers and a part or all of a remaining region of the current-blocking layer region (13) having the N2 concentration. <IMAGE>