Non-volatile semiconductor memory

摘要

To increase the facing surface and thus the coupling between the floating gate (10a) and control gate (11a) regions of a memory cell (26a), the floating gate (10a) and control gate (11a) regions have a width which is not constant in different section planes parallel to a longitudinal section plane (50) extending through the source (5) and drain (6) regions of the cell. In particular, the width of the floating gate (10a) and control gate (11a) regions is smallest in the longitudinal section plane (50) and increases linearly in successive parallel section planes moving away from the longitudinal section plane.