发明名称 |
Techniques for etching a low capacitance dielectric layer on a substrate |
摘要 |
A method for etching through a low capacitance dielectric layer in a plasma processing chamber. The low capacitance dielectric layer is disposed below a hard mask layer on a substrate. The method includes flowing an etch chemistry that includes N2 and H2 into the plasma processing chamber. There is included creating a plasma out of the etch chemistry. The method also includes etching, using the plasma, through the low capacitance dielectric layer through openings in the hard mask layer in the plasma processing chamber.
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申请公布号 |
US6114250(A) |
申请公布日期 |
2000.09.05 |
申请号 |
US19980135419 |
申请日期 |
1998.08.17 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
ELLINGBOE, SUSAN;FLANNER, JANET M.;MOREY, IAN J. |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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