发明名称 |
Semiconductor light emitting device |
摘要 |
A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.
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申请公布号 |
US6115399(A) |
申请公布日期 |
2000.09.05 |
申请号 |
US19980012790 |
申请日期 |
1998.01.23 |
申请人 |
ROHM CO. LTD. |
发明人 |
SHAKUDA, YUKIO |
分类号 |
H01L33/00;H01L33/32;H01S5/20;H01S5/32;H01S5/323;(IPC1-7):H01S3/19 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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