Method of fabricating a dynamic random access memory device

摘要

A method of fabricating a DRAM device to reduce the stress and enhance the adhesion between the top electrode and the interlevel dielectric layer, includes forming a titanium layer between the top electrode and the interlevel dielectric layer. A titanium oxide layer and a titanium silicide are formed between the titanium layer and the interlevel dielectric layer in post thermal procedures, which enhances the adhesion and avoids cracks and leakage current between the top electrode and the interlevel dielectric layer.