| 发明名称 |
Semiconductor memory device |
| 摘要 |
A semiconductor memory device comprises a plurality of sub bit lines 12a and 12b to which a plurality of memory cell transistors 13a through 13h are connected. The sub bit lines are selectively connected to a main bit line 11a. The sub and main bit lines are made of metallic material.
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| 申请公布号 |
US6115288(A) |
申请公布日期 |
2000.09.05 |
| 申请号 |
US19990272311 |
申请日期 |
1999.03.19 |
| 申请人 |
NEC CORPORATION |
发明人 |
AMANAI, MASAKAZU;KOBATAKE, HIROYUKI;OKU, SATORU;KATO, KAZUAKI;KANEKO, MASAKI |
| 分类号 |
H01L21/8247;G11C7/18;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/06;G11C5/06 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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