WIRE STRUCTURE OF SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: A wire structure of a semiconductor device and forming method thereof is to suppress electromigration and increase of resistance in a wire of a semiconductor device. CONSTITUTION: A wire structure of a semiconductor device comprises: a main wire material layer(72); a first conductive layer(73) reacted with the main wire material layer and containing an amount of nitrogen smaller than the nitrogen amount of the stoichiometry, for improving the directionality and adhesive force of the main wire material layer; and a second conductive layer(74) disposed on the first conductive layer and made of the same material with the first conductive layer. The first and second conductive layers are stacked on the main wire material in the named order to improve via resistance and oxidation of the main wire material layer and are then thermally annealed.