SENSE AMPLIFIER FOR HIGH-SPEED OPERATION OF ROM

摘要

PURPOSE: A sense amplifier for the high-speed operation of the ROM is provided to achieve the stable and high-speed operation of a sense amplifier by stabilizing the node of the sense amplifier using a signal to enable the sense amplifier. CONSTITUTION: Gates of a first PMOS transistor(PM3) and a first NMOS transistor(NM4) are connected to the sources of a data line and a third NMOS transistor(NM6) through a node 1 in common. The drain of a second NMOS transistor(NM5) of which the source is connected to a ground terminal is connected to the source of the first NMOS transistor(NM4). The gate of a second PMOS transistor(PM4) of which the source is connected to a source voltage(VDD) is connected to the output terminal of a first inverter(I3) through a node 4. The drain of a third PMOS(PM5) of which the source is connected to a node 3 is connected to the node 4. The gate of the second NMOS transistor(NM5) is connected to the input terminal of the first inverter(I3) and the gate of the third PMOS(PM5) through a sense amplifier enable terminal(SAE) and a node 5. The gate of the third NMOS transistor(NM6) of which the drain is connected to the source voltage(VDD) is connected to the input terminal of a second inverter(I4) of which the output terminal is connected to a data latch part(13).