发明名称 Method of oxidizing a substrate in the presence of nitride and oxynitride films
摘要 A system and method of forming an oxide in the presence of a nitrogen-containing material. A substrate having a nitrogen-containing material on a surface is placed in a reaction chamber. An oxygen-containing gas, or an oxygen-containing gas and a hydrogen-containing gas are provided to the chamber and reacted in the chamber. The reactive gases are used to oxidize the surface of the substrate and displace the nitrogen-containing material from the interface.
申请公布号 US6114258(A) 申请公布日期 2000.09.05
申请号 US19980175144 申请日期 1998.10.19
申请人 APPLIED MATERIALS, INC. 发明人 MINER, GARY E.;XING, GUANGCAI;LOPES, DAVID R.;KUPPURAO, SATHEES
分类号 H01L21/31;H01L21/28;H01L21/314;H01L21/316;H01L29/51;(IPC1-7):H01L21/823;H01L21/336;H01L21/320;H01L21/469 主分类号 H01L21/31
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