METHOD FOR FORMING METAL FILM

摘要

PURPOSE: A metal film forming method is to reduce a process cost and a process time by forming a metal film having a plane upper surface without an additional reflow process. CONSTITUTION: A metal film(106) is electrically connected to a conductive structure(104) formed on a semiconductor substrate(100). A method for forming the metal film comprises the steps of: heating the semiconductor substrate up to a melting point of the metal film; and depositing the metal film on the semiconductor substrate. The step of depositing the metal film on the heated semiconductor substrate is accompanied with a reflow process. That is, the metal film depositing process and the reflow process are simultaneously performed. The heating of the semiconductor substrate and the depositing of the metal film are performed within the same chamber.