| 摘要 |
A resist composition including (a) a polymer used in a chemically amplified resist and represented by the following formula: wherein R1 is selected from the group consisting of -H and -CH3, R2 is selected from the group consisting of t-butyl, tetrahydropyranyl and 1-alkoxyethyl groups, x is an integer of 1 to 4, and k/(k+1) is 0.5 to 0.9, and (b) 1-15% by weight of a photoacid generator (PAG) on the basis of the weight of the polymer.
|
