Sputtering method in multi-chambered device

摘要

A substrate is processed in a device having a vacuum chamber, at least one sputtering chamber, and a flow channel connecting the vacuum chamber to the sputtering chamber. According to the method, material is sputtered onto the substrate located in the sputtering chamber so that a sputtering gas flux amount is consumed by deposition onto the substrate. Prior to and during sputtering, sputtering gas flux flows into the vacuum chamber so that the total amount of sputtering gas flux flowed into the vacuum chamber prior to sputtering is substantially equal to the sputtering gas flux amount. At least during sputtering, the vacuum chamber is maintained at a partial pressure in a range of from more than 1x10-5 mbar up to 5x10-3 mbar.