Method for manufacturing a semiconductor device having fine contact hole with high aspect ratio

摘要

A semiconductor device includes at least one hole formed on a semiconductor substrate. A barrier method is formed on at least one portion in contact with the semiconductor substrate in the hole. A metal interconnection is constituted by two layers including a first Al-containing metal film formed on the barrier metal, and a second Al-containing metal film formed on the first Al-containing metal film and having a melting point lower than the melting point of the first Al-containing metal film.