Stable metallization for diamond and other materials

摘要

An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti-Si-N diffusion barrier. No diffusion between the layers and no delamination of the metallization was observed after annealing the schemes at 400 DEG C. for 100 hours and at 900 DEG C. for 30 minutes. Thermal cycling experiments in air from -65 to 155 DEG C. and adhesion tests were performed. Various embodiments are disclosed.