发明名称 Method of forming thin metal films
摘要 Formation of metal thin films by collimate sputtering with high productivity and high bottom coverages. The bottom coverages by collimate sputtering are increased by using a target having a high sputtered-particle emission probability in the range of angles at which the collimator passage rate is high, without increasing the aspect ratio of the collimator, that is, without lowering the productivity.
申请公布号 US6113750(A) 申请公布日期 2000.09.05
申请号 US19960752930 申请日期 1996.11.20
申请人 NEC CORPORATION 发明人 SHINMURA, TOSHIKI;YAMADA, HIROAKI;OHTA, TOSHIYUKI
分类号 C23C14/04;C23C14/34;H01L21/203;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):C23C14/34 主分类号 C23C14/04
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