发明名称 |
Method of forming thin metal films |
摘要 |
Formation of metal thin films by collimate sputtering with high productivity and high bottom coverages. The bottom coverages by collimate sputtering are increased by using a target having a high sputtered-particle emission probability in the range of angles at which the collimator passage rate is high, without increasing the aspect ratio of the collimator, that is, without lowering the productivity.
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申请公布号 |
US6113750(A) |
申请公布日期 |
2000.09.05 |
申请号 |
US19960752930 |
申请日期 |
1996.11.20 |
申请人 |
NEC CORPORATION |
发明人 |
SHINMURA, TOSHIKI;YAMADA, HIROAKI;OHTA, TOSHIYUKI |
分类号 |
C23C14/04;C23C14/34;H01L21/203;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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