发明名称 Semiconductor memory device for storing data with efficient page access of data lying in a diagonal line of a two-dimensional data construction
摘要 The objective of the invention is to conduct access of image data in the diagonal direction at high-speed by using the page mode. The memory region is divided into four memory arrays (15-1 to 15-4), and shifters (13-1 to 13-4) [sic: (14-1 to 14-4)] are provided that can shift the page address by one address in relation to each memory array. The image data are divided into sub-blocks of 4x4, 4 data items for the vertical correction are stored in the same memory array, and the page addresses for the sub-blocks connected in the horizontal direction are stored so as to be consecutive. In the case of accessing the data in the diagonal direction, when the data straddle adjacent blocks 4 at a time from the top, the page address is shifted by a shifter for the memory array containing that straddled column. In this way even in accessing the diagonal direction, 4 units of data are always obtained for a 1-page access, and data scanning of the diagonal direction by the page mode becomes possible.
申请公布号 US6115323(A) 申请公布日期 2000.09.05
申请号 US19980185685 申请日期 1998.11.04
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HASHIMOTO, MASASHI
分类号 G11C11/401;G06F12/06;G11C8/12;G11C11/407;(IPC1-7):G11C8/00 主分类号 G11C11/401
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