发明名称 |
METHOD FOR MANUFACTURING THIN FILM THERMISTOR |
摘要 |
PURPOSE: A method for manufacturing a thin film thermistor is provided to utilize a material for a low temperature such as a polyamide organic material or a glass of a low melting point as a substrate for manufacturing a thin film by forming the thermistor thin film by controlling an oxygen content ratio in a reaction gas at a low temperature range not by heating the substrate. CONSTITUTION: A substrate is formed of glass or alumina and cleaned(S10). An electrode is formed at both sides of the substrate to be applied signals from outside. This electrode pattern is formed by sputtering metal films such as Pt, Ag, or Au on the substrate(S20) and photoengraving the metal film(S30). An NTC thermistor thin film is formed on the substrate between the electrodes and the electrodes by using a sintered MnNi and NmNiCo oxide and performing sputtering in a gas atmosphere of Ar mixed with oxygen(S40). A protecting layer is formed of SiO2 on the thermistor thin film for protecting this film.
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申请公布号 |
KR20000055442(A) |
申请公布日期 |
2000.09.05 |
申请号 |
KR19990004063 |
申请日期 |
1999.02.06 |
申请人 |
KOREA ELECTRONICS TECHNOLOGY INSTITUTE |
发明人 |
KIM, CHEOL SU;CHOI, SUNG, HO;LEE, YONG SUNG |
分类号 |
H01C17/00;(IPC1-7):H01C17/00 |
主分类号 |
H01C17/00 |
代理机构 |
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地址 |
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